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Dispersion engineered silicon nitride waveguides by geometrical and refractive-index optimization

机译:分散工程氮化硅波导的几何和   折射率优化

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摘要

Dispersion engineering in silicon nitride (SiX NY ) waveguides isinvestigated through the optimization of the waveguide transversal dimensionsand refractive indices in a multi-cladding arrangement. Ultra-flat dispersionof -84.0 +/- 0.5 ps/nm/km between 1700 and 2440 nm and 1.5 +/- 3 ps/nm/kmbetween 1670 and 2500 nm is numerically demonstrated. It is shown that typicalrefractive index fluctuations as well as dimension fluctuations during thefabrication of the SiX NY waveguides are a limitation for obtaining ultra-flatdispersion profiles. Single- and multi-cladding waveguides are fabricated andtheir dispersion profiles measured (over nearly 1000 nm) using a low-coherencefrequency domain interferometric technique. By appropriate thicknessoptimization, the zero-dispersion wavelength is tuned over a large spectralrange in both single-cladding waveguides and multi-cladding waveguides withsmall refractive index contrast (3 %). A flat dispersion profile with 3.2ps/nm/km variation over 500 nm is obtained in a multi-cladding waveguidefabricated with a refractive index contrast of 37 %. Finally, we generate anearly three-octave supercontinuum in this dispersion flattened multi-claddingSiX NY waveguide.
机译:通过优化多包层结构中波导的横向尺寸和折射率,研究了氮化硅(SiX NY)波导中的色散工程。从数值上证明了在1700和2440 nm之间为-84.0 +/- 0.5 ps / nm / km和在1670和2500 nm之间为1.5 +/- 3 ps / nm / km的超平坦色散。结果表明,在制备SiX NY波导过程中,典型的折射率波动以及尺寸波动是获得超平坦分散曲线的限制。制造了单层和多层波导,并使用低相干频域干涉技术测量了其色散分布(在近1000 nm处)。通过适当的厚度优化,零色散波长可在折射率对比度较低(3%)的单包层波导和多包层波导中在较大的光谱范围内调谐。在折射率对比度为37%的多层波导中,获得了在500 nm范围内具有3.2ps / nm / km变化的平坦色散分布图。最后,我们在该色散平坦的多层SiX NY波导中生成了一个早期的三倍频程超连续谱。

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